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Part Number MTP12P10 described as Transistor with NSN 5961-01-532-3573 with FSC 5961 Semiconductor Devices and Associated Hardware by Manufacture General Dynamics Corporation is available in stock. We provide comprehensive database of aerospace and aviation components, sub-assemblies, and completed assemblies allows us to respond to your RFQ within 15 minutes.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-532-3573 Item Description: Transistor | 5961 | 015323573 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Mtp12p10 | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC OR CERAMIC |
| ABHP | OVERALL LENGTH | 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
| AGAV | END ITEM IDENTIFICATION | NSN 4935-01-136-0233; SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; W/S; MISSILE, PATRIOT |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 75.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | POWER MOSFET, 12 AMPS, 100 VOLTS; P-CHANNEL TO -220 |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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