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Part Number SS20179-1-FR described as Transistor with NSN 5961-00-448-5113 with FSC 5961 Semiconductor Devices and Associated Hardware by Manufacture Bae Systems is available in stock. We provide comprehensive database of aerospace and aviation components, sub-assemblies, and completed assemblies allows us to respond to your RFQ within 15 minutes.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-448-5113 Item Description: Transistor | 5961 | 004485113 | N | A | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| A | A | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1855-0187 | 1 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL-JEDEC-CASE OUTLINE DESIGNATION | TO-72 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | SOURCE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND-6.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 1.00 MILLIAMPERES MAXIMUM GATE 1 CURRENT AND 1.00 MILLIAMPERES MAXIMUM GATE 2 CURRENT AND 1.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 330.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION-STANDARD DATA | 80131-RELEASE6201 PROFESSIONAL-INDUSTRIAL ASSOCIATION SPECIFICATION |
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